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Vol.5(1983) >

Please use this identifier to cite or link to this item: http://hdl.handle.net/10649/321

Title: a-C:H と C-rich な a-Si_xC_x-1:H 膜フォトルミネッセンス
Other Titles: Photoluminescence in amorphous C:H and carbon rich Six C1-x:H films
Authors: 大瀧, 哲也
太田, 範雄
飯田, 誠之
Authors Affiliation: 長岡技術科学大学
長岡技術科学大学
長岡技術科学大学
Issue Date: 31-Jan-1984
Publisher: 長岡技術科学大学
Journal Title: 長岡技術科学大学研究報告
Volume: 5
Start page: 31
End page: 38
Abstract: The excitation spectra and thermal quenching behavior between 77-420K were measured for the near-optical-gap photoluminescence (peak; 2.2-2.6ev, half width; 0.80-0.85eV) appearing in amorphous C:H and carbon rich SixC1-x:H films. For excitation of photons with near-optical-gap energies, the photoluminescence peak energy depends on excitation photon energy. While, for excitation of photons of photons with energies much greater than the optical gap, the peak energy becomes constant. The excitation spectrum of the photoluminescence was found to be composed of two bands. The temperature dependence of the photoluminescence intensity depends on which excitation band is employed. The high energy band is considered to correspond to excitation of carriers to mobility gap. While, the low energy band is considered to be a characteristic excitation band reflecting localized tail states. A tentative energy-density-of-state model is presented to describe all these observation. Based on the configurational coordinate model, a brief discussion is also given on the separation of the electron-phonon contribution and energy spread of the band tail states responsible for the luminescence. The result seems to indicate that both contributions are larger than for the case of the luminescence in a-Si:H.
language: ja
Contents Version: publisher
URI: http://hdl.handle.net/10649/321
ISSN: 0388-5631
Appears in Collections:Vol.5(1983)

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